Samsung has announced that it has begun mass production of the industry’s first three-dimensional (3D) V-NAND flash memory using 32 vertically stacked cell layers, its second generation V-NAND offering. Samsung’s 32-layer 3D V-NAND (or Vertical NAND) requires a higher level of design technology to stack the cell arrays than the previous 24-layer V-NAND; however, it still delivers much greater production efficiency as Samsung will essentially be using the same equipment it used for production of the first generation V-NAND.
Samsung has announced that it has begun mass production of the industry’s first three-dimensional (3D) V-NAND flash memory using 32 vertically stacked cell layers, its second generation V-NAND offering. Samsung’s 32-layer 3D V-NAND (or Vertical NAND) requires a higher level of design technology to stack the cell arrays than the previous 24-layer V-NAND; however, it still delivers much greater production efficiency as Samsung will essentially be using the same equipment it used for production of the first generation V-NAND.
Samsung has also just launched a line-up of premium client (consumer) SSDs based on its 2nd generation of V-NAND flash memory with 128GB, 256GB, 512GB and 1TB storage capacities. After introducing 3D V-NAND-based SSDs to data centers last year, Samsung is now extending its V-NAND SSD line-up to high-end PC applications. The new SSDs have roughly twice the write endurance in addition to 20% less power draw compared to planar (2D) MLC NAND-based drives. Samsung will introduce additional 3D-based SSDs based on this generation V-NAND memory later in the year, with even higher reliability and higher-density.
