Samsung has announced that they have begun mass producing a 1-terabit (Tb) triple-level cell (TLC) eighth-generation V-NAND with the industry’s highest bit density. This new V-NAND will also feature the highest storage capacity available on the market, allowing for larger storage space in next-generation enterprise server systems. Samsung previously announced their 8th-gen 1Tb TLC V-NAND at Flash Memory Summit 2022 and Samsung Memory Tech Day 2022, as well as the expansion of its NAND flash production capacity in Pyeongtaek, Korea, in 2020.
Samsung has announced that they have begun mass producing a 1-terabit (Tb) triple-level cell (TLC) eighth-generation V-NAND with the industry’s highest bit density. This new V-NAND will also feature the highest storage capacity available on the market, allowing for larger storage space in next-generation enterprise server systems. Samsung previously announced their 8th-gen 1Tb TLC V-NAND at Flash Memory Summit 2022 and Samsung Memory Tech Day 2022, as well as the expansion of its NAND flash production capacity in Pyeongtaek, Korea, in 2020.
Samsung indicates that their 8th-generation V-NAND will help meet rapidly growing market demand and will allow them to develop more unique products and solutions. They were able to attain this bit density by significantly enhancing the bit productivity per wafer.
Using the latest “Toggle DDR 5.0 interface”, Samsung’s new V-NAND technology features an I/O speed of up to 2.4Gbps, which is roughly a 1.2X gain over their previous generation. This will allow the new V-NAND to support the performance requirements and standards of PCIe 4.0 and PCIe 5.0 (though at later date).
Samsung believes that its eighth-generation V-NAND will help expand the storage capacity in next-generation enterprise servers. They also plan to extend its use into the automotive market as well.
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