Samsung has announced that its memory fabrication line in Xi’an China has entered full-scale manufacturing operations in its new facility, which will manufacture Samsung’s advanced NAND flash memory chips, 3D V-NAND.
Samsung has announced that its memory fabrication line in Xi’an China has entered full-scale manufacturing operations in its new facility, which will manufacture Samsung’s advanced NAND flash memory chips, 3D V-NAND.
Samsung’s Vice Chairman and CEO Dr. Oh-Hyun Kwon went all out for the plant inauguration event, hosting for a large number of attendees including government dignitaries such as Zhao Zhengyong, Secretary of Communist Party of China Committee of Shaanxi province, Lou Qinjian, Governor of Shaanxi province, and Young-se Kwon, Ambassador of the Republic of Korea to the People’s Republic of China. Other guests included Samsung suppliers and customers.
Construction of the new manufacturing facility took roughly 20 months, which began back in September, 2012. The total area of the facility is approximately 750,000 square feet located on 282 acres of land.
By beginning operations in China, Samsung has secured a solid memory production base in a market where approximately 50 percent of global NAND flash is generated; all from production bases that are operated by numerous IT companies. Samsung plans to complete construction of its entire Xi’an complex, including an assembly facility and test line, by the end of 2014.
