Not long after announcing the production of 4GB DRAM package, Samsung has now started mass producing 256-gigabyte embedded memory based on the Universal Flash Storage (UFS) 2.0 standard for next-generation high-end mobile devices, another industry first. Samsung indicates that their new embedded memory will provide outstanding performance on mobile devices and will exceed that of a typical SATA-based SSD for PCs.
Not long after announcing the production of 4GB DRAM package, Samsung has now started mass producing 256-gigabyte embedded memory based on the Universal Flash Storage (UFS) 2.0 standard for next-generation high-end mobile devices, another industry first. Samsung indicates that their new embedded memory will provide outstanding performance on mobile devices and will exceed that of a typical SATA-based SSD for PCs.
The new 256GB embedded memory uses Samsung’s most advanced V-NAND flash memory chips as well as a specially-designed high-performance controller. In addition, because it based on the UFS 2.0 standard, it can handle up to 45,000 and 40,000 IOPS for random reading and writing respectively, which is more than two times faster than the 19,000 and 14,000 IOPS of the previous generation of UFS memory.
Samsung’s 256GB UFS also leverages two lanes of data transfer, which is capable of boasting 850MB/s in sequential reading while hitting 260MB/s in writes. Samsung adds that this will allow the 256GB UFS memory to support seamless Ultra HD video playback and multitasking functionality on large-screen mobile devices, including playing 4K Ultra HD movies on a split screen while searching image files or downloading video clips. Using Samsung’s advanced memory technology also allows the new UFS memory chips to be tightly compact and even smaller than a micro SD card.
Samsung plans to extend their premium storage line-ups that are based on its advanced V-NAND flash memory (including the new 256GB UFS) and intends increase their production volume according to global demand.
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